Fotodiodo de silicio onsemi J, mont. superficial, encapsulado SMT de 4 pines

High-density microcells J-Series sensors feature ON Semiconductors unique fast output terminal Temperature stability of 21.5 mV/°C Exceptional breakdown voltage uniformity of ±250 mV Available in a reflow solder compatible TSV chip-scale package Ultra-low dark count rates of 50 kHz/mm2 typical Optimized for high-performance timing applications, such as ToF-PET 3 mm, 4 mm and 6 mm sensor sizes Bias voltage of <30 V Results in a 50% photon detection efficiency (PDE) at 420 nm Improved signal rise time and the microcell recovery time Negates the need for active voltage control Industry-leading uniformity TSV package results in almost zero deadspace allowing the creation of high fill factor arrays and is ferrous-metal free Applications Medical Imaging Hazard & Threat 3D Ranging & Sensing Biophotonics & Sciences High Energy Physics