Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.High Current, Low VCE(sat), ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta) Benefits Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion Applications Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays Más información:  | | Tipo de Transistor: | NPN | Tensión Máxima Colector-Emisor: | 20 V | Tipo de Encapsulado: | WDFN | Tipo de Montaje: | Montaje superficial | Disipación de Potencia Máxima: | 1.5 W | Ganancia Mínima de Corriente DC: | 250 | Configuración de transistor: | Simple | Tensión Máxima Emisor-Base: | 6 V dc | Conteo de Pines: | 3 | Número de Elementos por Chip: | 1 | Dimensiones: | 2 x 2 x 0.75mm | Temperatura Máxima de Funcionamiento: | +150 °C | Configuración: | Único | Altura: | 0.75mm |
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