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| N.º art.:
3318E-1867386 N.º fabricante:
FDMC86262P EAN/GTIN:
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| This P-Channel MOSFET is produced using an advanced PowerTrench® technology. This very high density process is especially tailored to minimize on- state resistance and optimizad for superior switching performance.Max rDS(on) = 307 mΩ at VGS = -10 V, ID = -2 A Max rDS(on) = 356 mΩ at VGS = -6 V, ID = -1.8 A Very Low rDS(on) Mid Voltage P-Channel Silicon Technology Optimised for Low Qg Optimised for Fast Switching Applications as well as Load Switch Applications Applications Industrial Portable and Wireless Más información: | | Tipo de Encapsulado: | MLP 3.3 x 3.3 | Tipo de Montaje: | Montaje superficial | Disipación de Potencia Máxima: | 40 W | Conteo de Pines: | 8 | Número de Elementos por Chip: | 1 | Dimensiones: | 3.3 x 3.3 x 0.72mm | Temperatura Máxima de Funcionamiento: | +150 °C | Longitud: | 3.3mm | Temperatura de Funcionamiento Mínima: | -55 °C | Ancho: | 3.3mm |
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