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| N.º art.:
3318E-1867387 N.º fabricante:
FDP075N15A-F102 EAN/GTIN:
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| This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.RDS(on) = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A Fast Switching Low Gate Charge, QG = 77nC ( Typ.) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability Applications AC-DC Merchant Power Supply AC-DC Merchant Power Supply - Servers & Workstations AC-DC Merchant Power Supply - Desktop PC Uninterruptible Power Supply Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives Uninterruptible Power Supplies Micro Solar Inverters Más información: | | Tipo de Encapsulado: | TO-220 | Tipo de Montaje: | Montaje en orificio pasante | Disipación de Potencia Máxima: | 333 W | Conteo de Pines: | 3 | Número de Elementos por Chip: | 1 | Dimensiones: | 10.53 x 4.83 x 9.28mm | Temperatura Máxima de Funcionamiento: | +150 °C | Longitud: | 10.53mm | Temperatura de Funcionamiento Mínima: | -55 °C | Ancho: | 4.83mm |
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| Otros conceptos de búsqueda: MOSFET, Transistor MOSFET, Transistores MOSFET, Transistores, Transistor, transistor de potencia, 1867387, Semiconductores, Semiconductores Discretos, Transistores Bipolares, onsemi, FDP075N15AF102 |
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