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| N.º art.:
3318E-1867897 N.º fabricante:
FQB5N90TM EAN/GTIN:
5059045732853 |
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| This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.5.4A, 900V, RDS(on) = 2.3Ω(Max.) @VGS = 10 V, ID = 2.7A Low gate charge ( Typ. 31nC) Low Crss ( Typ. 13pF) Applications Lighting Más información: | | Tipo de Encapsulado: | D2PAK | Tipo de Montaje: | Montaje superficial | Disipación de Potencia Máxima: | 158 W | Conteo de Pines: | 2 + Tab | Número de Elementos por Chip: | 1 | Dimensiones: | 10.67 x 9.65 x 4.58mm | Temperatura Máxima de Funcionamiento: | +150 °C | Longitud: | 10.67mm | Temperatura de Funcionamiento Mínima: | -55 °C | Ancho: | 9.65mm |
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| Otros conceptos de búsqueda: Transistor SMD, Transistores SMD, Transistores, Transistor, transistor smd, 1867897, Semiconductores, Semiconductores Discretos, Transistores Bipolares, onsemi, FQB5N90TM |
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