| ![](/p.gif) |
![](/p.gif) |
| N.º art.: 3318E-1868997 N.º fabricante: FDC3601N EAN/GTIN: 5059045766643 |
| |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.1.0 A, 100 V RDS(on) = 500 mΩ@ VGS = 10 V RDS(on) = 550 mΩ @ VGS = 6 V Low gate charge (3.7nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick) Applications This product is general usage and suitable for many different applications. Más información: ![](/p.gif) | ![](/p.gif) | Tipo de Encapsulado: | TSOT-23 | Tipo de Montaje: | Montaje superficial | Conteo de Pines: | 6 | Disipación de Potencia Máxima: | 960 mW | Temperatura Máxima de Funcionamiento: | +150 °C | Número de Elementos por Chip: | 2 | Longitud: | 3mm | Temperatura de Funcionamiento Mínima: | -55 °C | Ancho: | 1.7mm |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Otros conceptos de búsqueda: Transistores MOSFET, Transistor SMD, Transistores SMD, Transistores, Transistor, transistor smd, 1868997, Semiconductores, Semiconductores Discretos, onsemi, FDC3601N |
| ![](/p.gif) | ![](/p.gif) |
| |