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| N.º art.:
3318E-1888269 N.º fabricante:
BUL1102EFP EAN/GTIN:
Sin datos |
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| This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.High voltage capability Very high switching speed Applications Four lamp electronic ballast for: 120 V mains in push-pull configuration 277 V mains in half bridge current feed configuration Más información: | | Tipo de Transistor: | NPN | Corriente DC Máxima del Colector: | 8 A | Tensión Máxima Colector-Emisor: | 450 V | Tipo de Encapsulado: | TO-220FP | Tipo de Montaje: | Montaje en orificio pasante | Disipación de Potencia Máxima: | 70 W | Configuración de transistor: | Simple | Tensión Máxima Emisor-Base: | 12 V | Conteo de Pines: | 3 | Número de Elementos por Chip: | 1 | Dimensiones: | 10.4 x 4.6 x 16.4mm | Temperatura Máxima de Funcionamiento: | +150 °C | Tensión de Saturación Máxima Colector-Emisor: | 1.5 V |
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| Otros conceptos de búsqueda: transistor de potencia, 1888269, Semiconductores, Semiconductores Discretos, Transistores Bipolares, STMicroelectronics, BUL1102EFP |
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