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| N.º art.:
3318E-1888497 N.º fabricante:
STB13007DT4 EAN/GTIN:
5059045839835 |
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| The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.Fully characterized at 125 ˚C Very high switching speed Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range Integrated free-wheeling diode High voltage capability Minimum lot-to-lot spread for reliable operation Large RBSOA Low spread of dynamic parameters Applications Electronic transformers for halogen lamps Switch mode power supplies Más información: | | Tipo de Transistor: | NPN | Corriente DC Máxima del Colector: | 16 A | Tensión Máxima Colector-Emisor: | 700 V | Tipo de Encapsulado: | D2PAK (TO-263) | Tipo de Montaje: | Montaje superficial | Disipación de Potencia Máxima: | 80 W | Ganancia Mínima de Corriente DC: | 8 | Configuración de transistor: | Simple | Tensión Máxima Emisor-Base: | 9 V | Conteo de Pines: | 3 | Número de Elementos por Chip: | 1 | Dimensiones: | 10.4 x 9.35 x 4.37mm | Temperatura Máxima de Funcionamiento: | +150 °C |
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