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| N.º art.:
9RQRV-30341151 N.º fabricante:
BC847AE6327HTSA1 EAN/GTIN:
Sin datos |
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| General Purpose Transistor, Type=BC847AE6327HTSA1, Base Emitter Saturation Voltage Max. (Vbe(sat))=900 mV, Collector Emitter Saturation Voltage Max. (Vce(sat))=600 mV, Collector-Base Voltage (Vcbo)=50 V, Collector-Emitter Voltage (Vceo)=50 V, Continuous Collector Current (Ic)=100 mA, DC Current Gain (hFE)=110, Emitter-Base Voltage (Vebo)=6 V, Operating Temperature Max.=155 °C, Pins=3, Power Dissipation (Pd)=330 mW, Transit Frequency=250 MHz, Configuration=Single, MSL=Level-1, Mounting Type=SMD, Package Type=SC-59, Packaging=Tape & Reel, Transistor Polarity=NPN, Automotive Qualification Standard=AEC-Q101 Más información: | | MERCATEO_WA_NR: | 8541100000 | Country of origin: | CN | Customs tariff number: | 8541100000 | Height: | 2 mm | Net weight: | 0,010 g | Depth: | 8 mm | Gross weight: | 0,01 g | Width: | 5 mm |
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| Otros conceptos de búsqueda: transistor smd, General Purpose Transistor |
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