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| N.º art.: 9RQRV-30388539 N.º fabricante: DI100N10PQ EAN/GTIN: Sin datos |
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![](/p.gif) | MOSFET, Type=DI100N10PQ, Continuous Drain Current (Id)=80 A, Drain-Source Voltage (Vds)=100 V, Fall Time=8 ns, Gate-Source Voltage=20 V, ON Resistance (Rds(on))=4.5 mΩ, Operating Temperature Max.=175 °C, Operating Temperature Min.=-55 °C, Power Dissipation (Pd)=60 W, Reflow Temperature Max.=260 °C, Rise Time=43 ns, Turn-OFF Delay Time=23 ns, Turn-ON Delay Time=26 ns, MSL=Level-1, Mounting Type=SMD, Package Type=QFN, Packaging=Tape & Reel, Transistor Polarity=N-Channel, Automotive Qualification Standard=AEC-Q101 Más información: ![](/p.gif) | ![](/p.gif) | MERCATEO_WA_NR: | 8541290000 | Country of origin: | CN | Customs tariff number: | 8541290000 | Height: | 6 mm | Net weight: | 1 g | Depth: | 15 mm | Gross weight: | 1 g | Width: | 10 mm |
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